• 专利标题:   Transferring graphene formed on first substrate to second substrate comprises e.g. forming support layer of sublimable material to cover graphene on first substrate on which graphene is formed and separating support layer and graphene layer.
  • 专利号:   KR2021126267-A, KR2319610-B1
  • 发明人:   LEE G H, KIM M
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   C01B032/194, C01B032/184
  • 专利详细信息:   KR2021126267-A 20 Oct 2021 C01B-032/194 202192 Pages: 11
  • 申请详细信息:   KR2021126267-A KR043839 10 Apr 2020
  • 优先权号:   KR043839

▎ 摘  要

NOVELTY - Transferring graphene formed on first substrate to second substrate comprises (a) forming support layer of sublimable material to cover graphene on first substrate on which the graphene is formed; (b) separating the support layer and the graphene layer from the first substrate; (c) transferring the support layer and the graphene layer to the second substrate such that the graphene faces the second substrate; and (d) removing the support layer from the second substrate by sublimating. The step (a) further comprises recrystallizing the support layer by further heating after the support layer is formed on the first substrate, and recrystallization of the support layer is performed by heating the support layer to liquefy and then solidify again. USE - The method is useful for transferring graphene formed on first substrate to second substrate. ADVANTAGE - The method reduces residues remain, or there is no damage to the graphene due to the removal of the support layer by physical or heat treatment, so the performance of graphene is reduced.