• 专利标题:   Gallium ion bombardment method for doping modified graphene, involves setting working parameter for graphene ion bombardment, such as ion bombardment time to lower effect of deflection of external electric field.
  • 专利号:   CN103996616-A, CN103996616-B
  • 发明人:   REN N, SHAO Y, WANG Q
  • 专利权人:   UNIV JIANGSU
  • 国际专利分类:   H01L021/263
  • 专利详细信息:   CN103996616-A 20 Aug 2014 H01L-021/263 201475 Pages: 8 Chinese
  • 申请详细信息:   CN103996616-A CN10181561 04 May 2014
  • 优先权号:   CN10181561

▎ 摘  要

NOVELTY - The method involves using detector (7) to detect the position of sample by a position signal from scanning unit (9). The sample position image is sent to a computer (10) through computer image generator (8). The working parameter for a graphene ion bombardment, such as bombardment time, gallium ion source heating parameter, ion flow sample surface ion bombardment area are considered to lower the effect of deflection of external electric field. USE - Gallium ion bombardment method for doping modified graphene. ADVANTAGE - The graphene electrical characteristics and intrinsic graphene two-dimensional structure are maintained, while selection of ion bombardment area is made accurately. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the process for performing bombardment of gallium ion. Gallium ion source (1) Lens system (3) Deflection system (4) Sample table (6) Detector (7) Computer image generator (8) Scanning unit (9) Computer (10)