• 专利标题:   Method for synthesizing graphene layer of e.g. field-effect transistor, involves reducing surface roughness and/or impurities content of support surface, and providing catalytic surface in conditioned environment.
  • 专利号:   NL2010216-C
  • 发明人:   JANSSEN G C A M
  • 专利权人:   UNIV DELFT TECH
  • 国际专利分类:   C01B031/04, C23C016/44
  • 专利详细信息:   NL2010216-C 04 Aug 2014 C23C-016/44 201502 Pages: 34 Dutch
  • 申请详细信息:   NL2010216-C NL2010216 31 Jan 2013
  • 优先权号:   NL2010216

▎ 摘  要

NOVELTY - The method involves providing a carrier that comprises a catalytic metal surface, a carbon source, a hydrogen source and an inert carrier gas. Surface roughness and/or impurities content of the support surface are reduced. The catalytic surface is provided in a conditioned environment. The carbon source is provided in the conditioned environment at pressure that is less than 1000 Torr, and flow rate is less than 500 sccm. A graphene from carbon is synthesized by activation with the catalyst at predetermined time period to a conformal layer of graphene on the catalytic surface. USE - Method for synthesizing a graphene layer of a field-effect transistor, a photonic/optoelectronic device and a gas/liquid membrane. ADVANTAGE - The method enables using a material in a metal container that can prevent entry of solid particles from deposition on a graphene and allowing entry of gas to form the graphene, and adapting a cooling system that can avoid overheating of a clamping part of a chamber. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene large layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for synthesizing a graphene layer of a field-effect transistor. CVD-chamber (10) Furnace (30) Gas inlet (40) Metal container (50) O-shaped ring (60)