• 专利标题:   New composite material of graphene composite silicon doped with sodium vanadium phosphate.
  • 专利号:   CN114864905-A
  • 发明人:   GAO Q, XIA K, HAN B, DOU M, SUN R, ZHOU C
  • 专利权人:   UNIV CHINA GEOSCIENCES WUHAN
  • 国际专利分类:   B82Y030/00, C01B025/45, C01B032/194, C01B033/00, H01M010/054, H01M004/36, H01M004/58, H01M004/62
  • 专利详细信息:   CN114864905-A 05 Aug 2022 H01M-004/36 202200 Chinese
  • 申请详细信息:   CN114864905-A CN10599411 30 May 2022
  • 优先权号:   CN10599411

▎ 摘  要

NOVELTY - Composite material of graphene composite silicon doped with sodium vanadium phosphate comprises chemical formula of composite material is Na3V2(PO4)3-x(SiO4)x-rGO (00.2), is new. USE - The graphene composite silicon-doped sodium vanadium phosphate composite material is useful in preparation of cathode active materials for sodium-ion batteries (claimed). ADVANTAGE - The graphene composite silicon-doped sodium vanadium phosphate composite material is in form of nano-particles, which shortens the migration path of sodium ions. The contact area between the electrode sheet and the electrolyte is increased, and by doping and compounding with graphene, improves conductivity of the material, enlarged ion migration channel, enhanced battery stability, electrochemical performance with high capacity and long cycle life was demonstrated in battery tests. DETAILED DESCRIPTION - Composite material of graphene composite silicon doped with sodium vanadium phosphate comprises formula of composite material Na3V2(PO4)3-x(SiO4)x-rGO (00.2) (I). INDEPENDENT CLAIMS are also included for: preparing a graphene composite silicon-doped sodium vanadium phosphate composite material comprising dissolving vanadium source, carbon source, the sodium source, the silicon source and the phosphorus source successively in deionized water, a gel-type NaV(PO4)-x(SiO)x (00.) precursor was prepared by hydrothermal method, mixing precursor with graphene, stirring, drying, grounding, and calcining to obtain nanoscale NaV(PO4)-x(SiO)x@rGO (0.010.) particles.3234232342