▎ 摘　　要

NOVELTY - The method involves performing high temperature reduction on a prepared oxidized graphene film to obtain reduced oxidized graphene film that is placed in a silicon-di-oxide etching solution. The reduced oxidized graphene film is striped from surface of a silicon-di-oxide/silicon lining. The striped graphene film with a polymethylmethacrylate (PMMA) protection layer is transferred onto surface of a transparent flexible lining. The PMMA protection layer on the surface of graphene film is removed to obtain a flexible transparent conductive graphene film. USE - Method for preparing a flexible transparent conductive graphene film utilized for flexible optoelectronic components. ADVANTAGE - The method enables preparing the flexible transparent conductive graphene film with high conductivity, better light-admitting quality, abundant raw materials, and high utilization rate. The graphene film is produced using a simple and environmental friendly procedure. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating a flexible transparent conductive graphene film preparing method.'(Drawing includes non-English language text)'