• 专利标题:   Method for producing graphene film on substrate of piezoelectric crystal containing lanthanum, gallium and tallium oxide.
  • 专利号:   RU2614289-C1
  • 发明人:   KONONENKO O V, MATVEEV V N, PANIN G N, ROSHCHUPKIN D V
  • 专利权人:   AS RUSSIA MICROELECTONICS HIGH PURITY
  • 国际专利分类:   B82B003/00, B82Y040/00, C01B031/04
  • 专利详细信息:   RU2614289-C1 24 Mar 2017 C01B-031/04 201764 Pages: 0 Russian
  • 申请详细信息:   RU2614289-C1 RU148249 10 Nov 2015
  • 优先权号:   RU148249

▎ 摘  要

NOVELTY - Substrate - a X-cut-off of piezoelectric crystal, e.g., La3Ga5.5Ta0.5O14, with planes (110) parallel to the crystal surface is placed into a quartz reactor. The reactor is pumped out to 10-3-10-8 Torr and heated up to 900-1450 degrees C. The reactor then filled with carbon gases, e.g. acetylene, methane or ethylene, to achieve pressure of 10-10-1 Torr. After 15-100 min. the reactor is pumped out again to achieve pressure of 3.10-6 Torr while cooling it down to the room temperature. USE - Chemistry. ADVANTAGE - Process simplification, temperature reduction, production of uniform high-quality graphene films. 5 cl, 2 dwg, 3 ex