▎ 摘 要
NOVELTY - Preparation of graphene/silicon carbide nanocomposite monolithic ceramic structure includes dissolving polycarbosilane and Karstedt catalyst in organic solvent, mixing the graphene oxide powder in deionized water, ultrasonically dispersing, adding the polycarbosilane or xylene mixture to graphene oxide solution, adding vinyltriethoxysilane into the mixed solution, heating, stirring, standing and taking the supernatant liquid, decompressing and distilling and obtaining the black solid and grinding to obtain powder product of fine precursor polycarbosilane; and pressing the powder product into a green body, carrying out pyrolysis, obtaining graphene/silicon carbide nanocomposite structure of ceramic silicon carbide-reduced graphene oxide, and high temperature pyrolyzing polycarbosilane to form silicon carbide, and passing graphene oxide in high temperature sintering to obtain reduced graphene oxide. USE - Method for preparing graphene/silicon carbide nanocomposite monolithic ceramic structure. DETAILED DESCRIPTION - Preparation of graphene/silicon carbide nanocomposite monolithic ceramic structure comprises: (A) dissolving polycarbosilane (PCS) and Karstedt catalyst in organic solvent, mixing the graphene oxide (GO) powder in deionized water, ultrasonically dispersing in deionized water, adding the PCS or xylene mixture to GO solution, adding vinyltriethoxysilane (VTES) into the mixed solution, adjusting to acidic with diluted hydrochloric acid, heating the mixed solution in a water bath, and magnetic stirring, standing and taking the supernatant liquid by rotary evaporator to decompress and distill and obtain the black solid and grinding to obtain powder product of fine precursor PCS(GOx); and (B) pressing the powder product into a green body and placing graphite paper in an inert gas, carrying out pyrolysis, obtaining graphene/silicon carbide (SiC) nanocomposite structure of ceramic SiC(rGOx), and high temperature pyrolyzing PCS to form SiC, passing GO in high temperature sintering to reduce to rGO. x=mass ratio of PCS and GO.