▎ 摘　　要

NOVELTY - Preparing graft-modified graphene by chemical vapor deposition method involves utilizing graphene wafer attached to silicon chip and a monolayer of graphene obtained by chemical vapor deposition method. The area of the graphene monolayer is 0.4-0.8 cm2 and the thickness is 0.3-0.7 nm. The amount of the catalyst used is 50-150 mg and the amount of reactant used is 20-80 mg. The chemical vapor deposition method involves utilizing graphene wafer attached to silicon chip that is placed in acetone solvent and dissolving the reactants and the catalyst in the acetone solvent. USE - Method for preparing graft-modified graphene by chemical vapor deposition method (claimed). ADVANTAGE - The method enables to prepare graft-modified graphene by chemical vapor deposition method that is applied to solar cells, high-performance nano electronic devices, composite materials, field emission materials, gas transmission sensors and energy storing fields. DETAILED DESCRIPTION - Preparing graft-modified graphene by chemical vapor deposition method involves utilizing graphene wafer attached to silicon chip and a monolayer of graphene obtained by chemical vapor deposition method. The area of the graphene monolayer is 0.4-0.8 cm2 and the thickness is 0.3-0.7 nm. The amount of the catalyst used is 50-150 mg and the amount of reactant used is 20-80 mg. The chemical vapor deposition method involves utilizing graphene wafer attached to silicon chip that is placed in acetone solvent and dissolving the reactants and the catalyst in the acetone solvent. The solution is stirred by using a magnetic stirrer at room temperature and the reaction mixture is allowed to react for 6-24 hours to obtain a graft-modified graphene.