▎ 摘　　要

NOVELTY - The utility model claims a graphite/silver quantum dot/gallium-nitride light-emitting diode, the light emitting diode is from bottom to top in turn with sapphire substrate or silicon substrate layer, gallium nitride layer, silver quantum dot layer, graphene, further provided with a side electrode on the gallium nitride layer, provided with a front electrode on the graphene layer, the thickness of the gallium nitride layer is graphite/silver quantum dot/gallium of 2 to 10 microns; the utility model of bidirectional light emitting light diode using silver quantum dot surface plasma reinforcing shining. combining the graphene material with high transmittance, high conductivity and excellent gallium nitride in luminescent property, and are capable of emitting light under reverse bias and various band, high brightness, simple preparation technique and low cost.