▎ 摘　　要

NOVELTY - The structural unit (1) has a material layer (3) which is applied to a base material (2) in such a way that the material layer forms an inhomogeneously configured thickness profile along the surface of the base material in the transport direction of the charge carriers. The material layer applied to the base material is composed of two different layers of different materials, which are applied next to one another or on top of one another. A material layer is applied with an inhomogeneous layer thickness or layer structure. USE - Structural unit designed as control unit of transistor, gate electrode of FET and collecting or deriving electrode of photodetector of component e.g. semiconductor component (all claimed). ADVANTAGE - The charge carrier concentration profile and the distribution of the charge carriers in a semiconductor component are influenced in a targeted manner. The semiconductor component properties in terms of conductivity and conductivity are improved. The charge carrier transport in the semiconductor component is improved to increase the efficiency of current injection and/or electron extraction, to generate charge carrier traps and/or to accelerate signals in supply lines and / or connections. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for producing the component structural unit. DESCRIPTION OF DRAWING(S) - The drawing shows a longitudinal sectional view of the component structural unit. Structural unit (1) Base material (2) Material layer (3)