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  • 专利标题:   Method for controlling phase transition temperature of vanadium oxide laminate involves laminating graphene layer and vanadium dioxide layer on substrate, removing substrate and transferring laminate onto another substrate.
  • 专利号:   KR2013108744-A, KR1339761-B1
  • 发明人:   HAN S H, KIM H K, YANG W S
  • 专利权人:   KOREA ELECTRONICS TECHNOLOGY, KOREA ELECTRONICS TECHNOLOGY INST
  • 国际专利分类:   B32B043/00, C01B031/02, C01G031/02
  • 专利详细信息:   KR2013108744-A 07 Oct 2013 B32B-043/00 201379 Pages: 12
  • 申请详细信息:   KR2013108744-A KR030418 26 Mar 2012
  • 优先权号:   KR030418

▎ 摘　　要

NOVELTY - A graphene layer and vanadium dioxide layer are laminated on a substrate. The substrate is removed and the laminate is transferred to another substrate in order to control the phase transition temperature of vanadium dioxide laminate. USE - Method for controlling phase transition temperature of vanadium oxide laminate (claimed).