• 专利标题:   Graphene oxide doped zinc oxide nanometer thin film manufacturing method, involves absorbing-coating mixed solution on sensitive membrane of device and drying in vacuum to obtain graphene doped zinc oxide nanometer film.
  • 专利号:   CN102654474-A
  • 发明人:   HOU C, HUO Z, LI D, LIU M, LONG S, YAN X, WANG X, ZHANG M, XIE C, ZHOU W
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   G01N027/30
  • 专利详细信息:   CN102654474-A 05 Sep 2012 G01N-027/30 201316 Pages: 6 Chinese
  • 申请详细信息:   CN102654474-A CN10050073 02 Mar 2011
  • 优先权号:   CN10050073

▎ 摘  要

NOVELTY - The method involves preparing graphite oxide using graphite, anhydrous sodium nitrate, concentrated sulfuric acid and potassium permanganate, and using the graphite oxide for preparing graphene. Graphene oxide and zinc oxide are added in two bi-alcohol solution, and ultrasonic oscillated to obtain mixed solution. The mixed solution is absorbing-coated on a sensitive membrane of a device, and dried in vacuum to obtain the graphene doped zinc oxide nanometer film. USE - Method for manufacturing a nanometer thin film of graphene oxide doped zinc oxide. ADVANTAGE - The method enables utilizing graphene with better electronic conductivity. The graphene is doped with zinc oxide, which improves the film sensitivity. The graphene is synthesized by a chemical dispersion method, so that film has high controllability, and can be produced in large scale. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for manufacturing a nanometer thin film of graphene oxide doped zinc oxide. '(Drawing includes non-English language text)'