▎ 摘　　要

NOVELTY - Epitaxially growing uniform graphene more than six inches on silicon carbide (4H-SiC substrate, comprises (i) grinding, polishing, and cleaning silicon surface of a 4H-SiC wafer with a diameter of more than six inches, (ii) using large-diameter furnace cavity high-temperature furnace as a growth furnace, placing 4H-SiC wafer on a graphite tray with the silicon side facing down, placing graphite tray on the crucible chassis, covering the top of the crucible with a crucible top plate, setting thickened thermal insulation layer on the periphery of the crucible, and placing in the high temperature furnace cavity together, (iii) vacuumizing high-temperature furnace chamber, heating to 1000-1100degreesC, feeding argon gas, controlling pressure at 800-1000 mbar, heating to 1200-1400degreesC for 60-120 minutes and completing the graphene growth, and (iv) closing argon gas, moving crucible up quickly, cooling to 500-700 degrees Celsius, closing growth furnace and naturally cooling to room temperature. USE - The method is useful for epitaxially growing uniform graphene more than six inches on silicon carbide (4H-SiC substrate. ADVANTAGE - The material has high quality and high uniformity, realizes the radial temperature field of the graphene growth process is flat temperature field through the flat temperature field and controlling the growth temperature.