▎ 摘　　要

NOVELTY - The method involves forming upper electrode on substrate (1). The substrate with electrode is formed on the growth of medium material (5). The graphene (6) is grown to produce graphene device. The gate (4) of the electrode is embedded in the substrate. The medium material is grown in the gate. The substrate is made of Silicon carbide (SiC), Silicon dioxide (SiO2), Silicon (Si), sapphire, Boron nitride (BN), diamond, and glass. USE - Method for manufacturing graphene device. ADVANTAGE - The graphene device damage and pollution are avoided. The graphene device performance is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the graphene device. Substrate (1) Source electrode (2) Gate (4) Medium material (5) Graphene (6)