▎ 摘　　要

NOVELTY - The method involves forming an ultra thin silicon nucleation layer (602) made of amorphous silicon of 2-10 angstroms thickness on a portion of the surface of the carbon-based material (402) to facilitate nucleation of the coating on the surface of material. A thin high-K dielectric coating of 2-100 angstroms thickness is deposited on the ultra thin silicon layer by atomic layer deposition so that the coating is formed on surface of material. USE - Method for forming thin coating dielectric material on surface of carbon-based material e.g. graphene for use in electronic device e.g. FET device (all claimed). ADVANTAGE - Since the silicon nucleation layer is formed on the carbon-based material, the nucleation of the coating can be facilitated and coverage of the surface is achieved. The silicon layer is adjusted so that the mobility degradation is reduced, and the performance of the device is increased. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method for fabricating FET device; and (2) FET device. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view explaining the process of fabricating FET device. Carbon-based material (402) Substrate (404) Insulating layer (406) Silicon nucleation layer (602) Dielectric layer (702)