▎ 摘　　要

NOVELTY - Substrate treating apparatus has a chamber (100) having a treating space, a support unit (200) positioned within the treating space and configured to support a substrate, and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space. The plasma generation unit (400) has a bottom electrode component, a top electrode component disposed opposite the bottom electrode, and a high frequency power source for applying a high frequency power to the top electrode component. The top electrode component comprises a first plate and an electrode pattern on the first plate and including electrically insulated a first electrode pattern and a second electrode pattern. USE - Substrate treating apparatus for treating substrate using plasma, such as photolithography process, etching process, ashing process, ion implantation process, thin film deposition process and cleaning process. ADVANTAGE - The substrate treating apparatus performs a plasma treatment and a fast heating in one chamber, and improves an etching on a substrate or a uniformity of a film formation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of substrate treating apparatus. 100Chamber 200Support unit 300Gas supply unit 400Plasma generation unit 500Heating unit