• 专利标题:   Method for manufacturing element of gas sensor, involves performing photon texture process on graphene nanostructure, coating graphene catalyst material in graphene nanostructure, and fixing composite material in graphene nanostructure.
  • 专利号:   KR2015020334-A, KR1521417-B1
  • 发明人:   CHOI S J, KIM D
  • 专利权人:   KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   B82B003/00, G01N027/12
  • 专利详细信息:   KR2015020334-A 26 Feb 2015 G01N-027/12 201521 Pages: 20
  • 申请详细信息:   KR2015020334-A KR095125 12 Aug 2013
  • 优先权号:   KR095125

▎ 摘  要

NOVELTY - The method involves forming a nanaostructure of graphene and metal oxide semiconductor, where nanostructure comprises metal oxide semiconductor nanoparticles. A photon texture process is performed on the nanostructure. A graphene catalyst material is coated on the nanostructure. The graphene catalyst material is crushed through the photon texture process. A composite material is fixed in the nanostructure. Chemical composition method is performed in the graphene. The graphene catalyst material is selected from monolayer graphene, multi-layer graphene, graphite or graphene oxide. USE - Method for manufacturing an element of a gas sensor. ADVANTAGE - The method enables effectively detecting multiple gases. The method enables increasing catalytic function of the graphene material. DETAILED DESCRIPTION - The metal oxide semiconductor is made of zinc oxide, tin oxide, tungsten oxide, iron oxide, nickel oxide, copper oxide, boron oxide, aluminum oxide or zirconium oxide. An INDEPENDENT CLAIM is also included for a gas sensor element. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing an element of a gas sensor.'(Drawing includes non-English language text)'