▎ 摘　　要

NOVELTY - The manufacturing method involves forming a silicon layer on a substrate and forming a nickel layer on the silicon layer. A stress is applied in the nickel layer via helium ion implantation and annealing. The graphene is grown on both major surfaces of the nickel layer via plasma-related chemical vapor deposition. The graphene on the major surface of the nickel layer and the graphene initially formed at the interface of the silicon layer and the nickel layer are mechanically removed to form a graphene-inclusive thin film. USE - Manufacturing method of coated article (claimed) with graphene-inclusive thin film. ADVANTAGE - The manufacturing method enables the manufacturing of a highly uniform interfacial graphene subsequent to a dry, clean, mechanical delamination that is executed over large and potentially indefinite dimensions. The hydrogen promotes growth of higher quality graphene by eliminating or minimizing the competing growth. The manufacturing method performs remote plasma inclusive process which reduces or eliminates the orientation effect of the electrical field on the grown film and allows film growth at lower temperatures. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a coated article that includes graphene-inclusive thin film supported by a glass substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the growth mechanism of graphene on the surface of the nickel and at the nickel/silicon interface.