• 专利标题:   Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.
  • 专利号:   CN106884152-A
  • 发明人:   ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C23C016/02, C23G001/10
  • 专利详细信息:   CN106884152-A 23 Jun 2017 C23C-016/02 201749 Pages: 9 Chinese
  • 申请详细信息:   CN106884152-A CN10933627 15 Dec 2015
  • 优先权号:   CN10933627

▎ 摘  要

NOVELTY - Preparing copper substrate based on cleaning process involves providing a copper substrate for preparing graphene, treating copper substrate in the aerobic environment to oxidize copper substrate surface to form a copper oxide layer, and then placing the oxidized copper substrate in a reaction solution of copper oxide to remove the copper oxide layer containing impurities by etching to obtain a copper substrate with clean surface. USE - Method for preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition (CVD) graphene (claimed), reducing the defects in the graphene, and preparing high-quality graphene. ADVANTAGE - The method enables to prepare copper substrate based on cleaning process, in simple manner with high reproducibility, and strong controllability, is suitable for batch processing, and has industrial applicability.