▎ 摘　　要

NOVELTY - Semiconductor gas sensing material comprises zinc oxide- stannic oxide: fluorine-titanium dioxide-copper monoxide composite nano material, which is an oxide nanoparticle with a particle diameter of 20-70 nm, where the graphene is a two-dimensional shape and crisscrossing to form three-dimensional network structure, the four phases are uniformly dissolved to form a composite material at the microscopic domain level, the zinc oxide-stannic oxide:fluorine-titanium dioxide-copper oxide nanoparticles are uniformly distributed, adhere to the network structure of the two-dimensional graphene and forms chemical bonds with the two-dimensional graphene and resulting in an interface coupling effect. USE - The semiconductor gas sensing material is used for preparing semiconductor gas sensor for gas sensing test of hydrogen sulfide, ethanol or methane, and works at normal temperature (all claimed). ADVANTAGE - The semiconductor gas sensor is successive and organically unified, realizes effective normal temperature sensing for gases such as hydrogen sulfide and ethanol and methane, is intelligent and has wearable sensing products. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for preparing the semiconductor gas sensing material involving (i) preparing precursor liquid preparation of unit oxide nanomaterials by adding 4-5 g zinc chloride to 5 ml water to make solution (I), adding 5.5-6.5 g sodium carbonate to 35 ml water to make solution (II), while stirring, dripping solution (I) into the solution (II) to form zinc oxide precursor liquid, taking 9.5-10.5 g stannous chloride dehydrate and 0.04-0.05 g sodium fluoride, dissolving in 200 ml deionized water to prepare solution (III), measuring 15-25 ml ammonia, diluting with 120 ml deionized water to prepare solution (IV), while stirring, dripping solution (IV) into solution (III) to form fluorine-doped titanium dioxide precursor liquid, measuring 5.5-6.5 ml tetra-n-butyl titanate and dissolving it in deionized water, conducting hydrothermal reaction at 120 degrees C, cooling to normal temperature after the reaction to form titanium dioxide precursor liquid, and dissolving 8.5-9.5 g cupric chloride dehydrate in 60 ml deionized water to prepare solution (V), dissolving 5-6 g sodium hydroxide in 60 ml deionized water to prepare solution (VI), under stirring, dripping solution (VI) into solution (V) to form a copper oxide precursor liquid, (ii) mixing the above-mentioned zinc oxide precursor liquid, fluorine-doped titanium dioxide precursor liquid, titanium dioxide precursor liquid and copper oxide precursor liquid to form multi-element oxide nanomaterial precursor liquid, (iii) completely stirring the precursor liquid of the multi-element oxide nano-materials, ultrasonically treating, washing with aqueous solution, then with ethanol, and filtering with suction, drying the product after suction filtration at 60 degrees C using infrared heating method under vacuum not exceeding 100 Pa or drying at 60 degrees C using spray drying method, using microwave heating, calcining at 300-500 degrees C for 1.5-2 hours in an oxygen atmosphere and natural cooling to normal temperature, and grinding to obtain zinc oxide-stannic oxide:fluorine-titanium dioxide-copper monoxide multi-element oxide composite nano material and (iv) adding 3-7 wt.% graphene to the above-mentioned multi-element oxide nano-materials, mixing, adding the mixed product to ethanol and ball milling, after taking it out, drying by infrared heating, grinding and subjecting the grounded product to UV activation treatment, where the UV light is 254 nm and the irradiation time is 40-60 minutes; and (2) method for preparing a semiconductor gas sensor involving using the room temperature semiconductor gas sensor material as the gas sensor material, adding indium(III) chloride tetrahydrate, nickel oxide, tin oxide, magnesium oxide and antimony(III) oxide, pickling asbestos and deionized water, adjusting it into a paste to form a slurry, coating the slurry on the ceramic tube or flat substrate and naturally drying in the shade, processing at 600-700 degrees C, packaging and soldering to obtain the room temperature semiconductor gas sensor.