▎ 摘　　要

NOVELTY - Formation of two-dimensional silicon carbide involves providing (202) silicon carbide particles, in which each of the particles has dimension of 4 mu m or more, preparing (204) a solution comprising the silicon carbide particles and a solvent, ultrasonically processing (206) the solution for 4-24 hours, and centrifuging (208) to extract two-dimensional silicon carbide. USE - Formation of two-dimensional silicon carbide (claimed) used as wide band gap semiconducting material in high-temperature, high-frequency and high-power electronic applications. Uses include but not limited to nanosheet transistor, light-emitting diode, solar cell, spintronic and quantum commuters, optical switch and laser. ADVANTAGE - The method enables formation of two-dimensional silicon carbide with excellent electronic, optical, magnetic and mechanical properties. The wide band gap semiconducting material containing two-dimensional silicon carbide is capable of forming flexible, lightweight, ultrafast and high-efficient optoelectronic and electronic devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for liquid exfoliation method (200), which involves providing a precursor material comprising one-dimensional structures, preparing a solution comprising the precursor material and the solvent, ultrasonically processing the solution, centrifuging, and extracting the two-dimensional material which comprises same composition as precursor material. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating liquid exfoliation method for forming two-dimensional silicon carbide. Liquid exfoliation method (200) Provision of silicon carbide particles (202) Formation of solution comprising silicon carbide particles and solvent (204) Ultrasonic processing (206) Centrifugation (208)