▎ 摘　　要

NOVELTY - Field effect transistor comprises substrate, gate electrode on the substrate, insulating layer on the gate electrode, source electrode on the insulating layer, drain electrode spaced apart from the source electrode, channel between the source electrode and the drain electrode and comprising a two-dimensional (2D) material where 2D material electrode bonding layer adjacent to the source electrode and the drain electrode and comprising a tensile strain region; and a stressor adjacent to the 2D material electrode bonding layer and configured to apply a tensile strain to the 2D material electrode bonding layer. USE - Field effect transistor used in semiconductor devices for performing an electrical switching function, and also used for various integrated circuit (IC) devices including memories, driving ICs, and logic devices. ADVANTAGE - The field effect transistor occupies less space and also reduces the size of the transistor by maintaining the performance, and has high power efficiency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for (1) an electronic apparatus; (2) a method of manufacturing a field effect transistor; and (3) a field effect transistor.