• 专利标题:   Method for transferring graphene on substrate used in electronic device, involves depositing graphene on side of metal substrate, and stacking target substrate on metal substrate-graphene layer to form stacked structure.
  • 专利号:   US2013220530-A1, KR2013097631-A, US9039886-B2
  • 发明人:   GONG K
  • 专利权人:   GONG K
  • 国际专利分类:   B32B038/00, B32B038/10, B32B015/08, C25D021/12, C25D005/18, C25D005/34, B32B037/06, B32B038/16, C01B031/04, C25F005/00
  • 专利详细信息:   US2013220530-A1 29 Aug 2013 B32B-038/10 201360 Pages: 18 English
  • 申请详细信息:   US2013220530-A1 US659355 24 Oct 2012
  • 优先权号:   US602739P, US659355

▎ 摘  要

NOVELTY - A graphene transferring method involves depositing graphene (22) on a side of a metal substrate (21) to form a metal substrate-graphene layer followed by stacking a target substrate (23) on the metal substrate-graphene layer to form a stacked structure in which a side of the target substrate faces the graphene layer. The stacked structure is passed through an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate. USE - Method for transferring graphene on a substrate used in an electronic device. ADVANTAGE - The method enables transferring the graphene with stable electrical, mechanical and chemical characteristics, high flexibility, better transparency and high electrical conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for transferring graphene. Metal substrate (21) Graphene (22) Target substrates (23)