▎ 摘　　要

NOVELTY - The junction has a periodic graphene nanoribbon layer including a set of segmented units and placed between a pinned layer (310) and a free layer (330), where the set of segmented units includes a first segment and a second segment including a potential difference between the first segment and the second segment. The periodic graphene nanoribbon layer is laterally connected to the pinned layer and the free layer. The first segment includes a relatively higher potential, and the second segment includes a relatively lower potential. USE - Graphene-based magnetic tunnel junction for use in magnetic RAMs, transistor devices and magnetic field sensors. ADVANTAGE - The junction is provided with a high tunnel magnetoresistance (TMR) ratio to be used in hard disk read heads, the magnetic RAMs, and the magnetic field sensors so as to greatly enhance performance of the junction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for forming a magnetic tunnel junction. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene-based magnetic tunnel junction. Pinned layer (310) Segmented potentials (320) Free layer (330) Substrate (340) Electrodes (3210-32N0)