▎ 摘　　要

NOVELTY - Growing graphene on a special-shaped metal substrate comprises (i) pre-treatment of the special-shaped metal substrate: ultrasonically cleaning special-shaped metal substrate three times with acetone, ethanol and deionized water in sequence, and then adding into a melamine aqueous solution and soaking, and ultrasonically cleaning in water; (ii) adding the special-shaped metal substrate processed in the previous step into the quartz tube of the induction melting furnace, and pouring argon gas into the quartz tube, evacuating; (iii) heating the special-shaped metal substrate to make the special-shaped metal substrate reach a softened state, and then cooling to 800-1000 degrees C, and passing hydrogen peroxide gas and argon gas into the quartz tube at a flow rate of 0-300 ml/minute; (iv) cooling to room temperature in an argon atmosphere to obtain a special-shaped metal substrate for growing graphene films. USE - The method is useful for growing graphene on a special-shaped metal substrate. ADVANTAGE - The method directly grows graphene material on a special-shaped metal substrate, which optimizes the performance of the metal substrate, avoids structural damage and technical costs in the graphene transfer process, and strengthens microchannel heat sinks and electronic devices based on two-dimensional materials e.g. graphene. DETAILED DESCRIPTION - Growing graphene on a special-shaped metal substrate comprises (i) pre-treatment of the special-shaped metal substrate: ultrasonically cleaning special-shaped metal substrate three times with acetone, ethanol and deionized water in sequence, and then adding into a melamine aqueous solution with a mass concentration of 40-50% and soaking for 1-3 minutes, and ultrasonically cleaning in water for 5 minutes; (ii) adding the special-shaped metal substrate processed in the previous step into the quartz tube of the induction melting furnace, and pouring argon gas into the quartz tube, evacuating, and repeating three times; (iii) heating the special-shaped metal substrate to make the special-shaped metal substrate reach a softened state, and then cooling to 800-1000 degrees C, and passing hydrogen peroxide gas and argon gas into the quartz tube at a flow rate of 0-300 ml/minute; the ventilation time is: after 20-40 minutes, the carbon source gas is introduced, the flow rate is 0-50 ml/minute; the growth time is 90-600 minutes; the pressure in the quartz tube ranges from 0.1 Torr to atmospheric pressure; (iv) cooling to room temperature in an argon atmosphere to obtain a special-shaped metal substrate for growing graphene films; where the quartz tube is provided with a special-shaped metal substrate support plate, and a special-shaped metal substrate is placed on the special-shaped metal base support plate, multiple through holes are opened on the special-shaped metal base support plate, and a carbon source gas delivery pipe is arranged under the special-shaped metal base support plate, and the carbon source gas delivery pipe is provided with multiple gas outlets.