▎ 摘　　要

NOVELTY - The variable energy graphene tunneling transistor (100) has a gate electrode (60), which is formed in the lower portion of a secondary insulation layer (30). A source electrode (40) is formed into the material. A drain electrode (50) is provided in the upper portion of a primary insulation layer (20). The respective laminated first insulation layer is provided in the upper portion of a graphene layer (10). A variable energy graphene radiation penetration transistor is proportional to the energy of light between the source electrode and the drain electrode. USE - Variable energy graphene tunneling transistor for use in an electric component. Uses include but are not limited to switching element, logic computering element, memory device development, radio-frequency circuit, electromagnetic wave wireless telecommunication, infrared ray application system, visible ray application, lamp, laser and display development. ADVANTAGE - The gate electrode is formed in the lower portion of a secondary insulation layer and drain electrode is provided in the upper portion of a primary insulation layer, thus enables on-off is achieved in multiple gate voltages due to the property of the negative resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a variable energy graphene tunneling transistor. Graphene layer (10) Insulation layers (20,30) Source electrode (40) Drain electrode (50) Gate electrode (60) Variable energy graphene tunneling transistor (100)