▎ 摘　　要

NOVELTY - Graphene terahertz detector under ferroelectric control comprises a silicon dioxide layer (2) arranged on a substrate (1). A graphene (3) is arranged on the silicon dioxide layer. A source electrode (4) and a drain electrode (5) are arranged at the two ends of graphene. The source electrode and the drain electrode are two-dimensional ferroelectric material CuInP2S6. A gate electrode is formed above the two-dimensional ferroelectric material CuInP2S6. The substrate is intrinsic high-resistance silicon with a resistivity of 10000 Ω.cm and a thickness of 500 μm. The thickness of described silicon dioxide layer is 300 nm. The source electrode and the drain electrode are metal composite electrodes. The lower metal is chromium, as an adhesion layer, the thickness is 10 nm. The upper metal is gold. The gate electrode is a metal composite electrode, the lower metal is chromium, and as an adhesion layer and thickness is 10 nm, upper metal is gold and the thickness is 90 nm. USE - Used as graphene terahertz detector under ferroelectric control. ADVANTAGE - The detector realizes highly sensitive terahertz broad-spectrum absorption at room temperature, enhances the source-drain current of the detector, greatly improves the signal-to-noise ratio and detection capability of the device, and has high sensitivity in the terahertz waveband, high response rate, fast response, low power consumption and convenient integration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing the graphene terahertz detector under ferroelectric control. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene terahertz detector under ferroelectric control. 1Substrate 2Silicon dioxide layer 3Graphene 4Source electrode 5Drain electrode 6Two-dimensional ferroelectric material CuInP2S6 7Gate electrode