• 专利标题:   Preparing nickel-based hydrophilic graphene film by cleaning surface of polycrystalline nickel foil, treating surface of polycrystalline nickel foil with surfactant, vacuumizing polycrystalline nickel foil in vacuum furnace and heating.
  • 专利号:   CN108220912-A
  • 发明人:   LI D, ZOU W, ZHOU X, YE Y, YE Z, ZOU A, RAO Y, PENG X, DONG Y, HONG Y
  • 专利权人:   UNIV NANCHANG HANGKONG
  • 国际专利分类:   C01B032/186, C23C016/02, C23C016/26
  • 专利详细信息:   CN108220912-A 29 Jun 2018 C23C-016/26 201855 Pages: 7 Chinese
  • 申请详细信息:   CN108220912-A CN10044083 17 Jan 2018
  • 优先权号:   CN10044083

▎ 摘  要

NOVELTY - Method for preparing nickel-based hydrophilic graphene film involves (a) ultrasonically cleaning a surface of polycrystalline nickel foil as a metal substrate using cleaning solution, (b) carrying out surface treatment of polycrystalline nickel foil with a surfactant, and (c) placing the treated polycrystalline nickel foil in a vacuum furnace, vacuumizing, heating, introducing argon gas, introducing hydrogen, introducing carbon source gas, growing graphene film on the polycrystalline nickel foil, turning off hydrogen and carbon source, cooling, introducing carbon source gas, growing the graphene film on the polycrystalline nickel foil, turning off hydrogen gas and carbon source gas, and cooling to obtain a hydrophilic graphene film. The cleaning solution is aqueous ammonia or hydrochloric acid. The surfactant is sodium dodecylbenzenesulfonate or cetyltrimethylammonium bromide. The carbon source gas is methane, acetylene or ethane. USE - Method is useful for preparing nickel-based hydrophilic graphene film. ADVANTAGE - The method enables preparation of the nickel-based hydrophilic graphene film with high hydrophilic property and purity. DETAILED DESCRIPTION - In the step (a), the ultrasonic cleaning step is carried out for 10-20 minutes. In the step (b), the surface treatment step is carried out for 10-20 minutes. In the step (c): the step of introducing hydrogen is carried out at a flow rate of 100-300 sccm when the temperature in the furnace is 800 degrees C; the step of introducing carbon source gas is carried out at a flow rate of 2-6 sccm when the temperature in the furnace is 950 degrees C; the step of growing graphene film is carried out for 5-10 minutes; the cooling step is carried out at a cooling rate of 5-15 degrees C/minute; the step of introducing carbon source gas is carried out at a flow rate of 1-4 sccm when the temperature is 980 degrees C.