▎ 摘　　要

NOVELTY - Preparation of fluorinated graphene/high-k dielectric composite structure involves (1) selecting a semiconductor substrate, (2) preparing single-layer graphene and transferring to the substrate, (3) performing the fluorination treatment to the graphene using atomic layer deposition (ALD) plasma mode, (4) growing a nano-thickness high-k dielectric layer on the surface of the fluorinated graphene in situ using thermal growth mode of ALD, and (5) performing high temperature rapid annealing treatment. USE - Preparation of fluorinated graphene/high-k dielectric composite structure. ADVANTAGE - The method enables preparation of fluorinated graphene/high-k dielectric composite structure having excellent passivation characteristics, effectively inhibits the growth of the interface layer, reduces the interface state density, and suppresses current leakage.