• 专利标题:   Graphene-cobalt(II,III) oxide solid phase micro-extraction probe prepared by e.g. adding cobalt salt solution into polytetrafluoroethylene reactor, adding cleaned titanium wire, carrying out hydrothermal reaction and sputter depositing.
  • 专利号:   CN111665110-A
  • 发明人:   ZHANG R
  • 专利权人:   QINGDAO FEICAN NEW MATERIAL TECHNOLOGY
  • 国际专利分类:   B01J020/20, B01J020/281, G01N001/28, G01N001/40, G01N021/76, G01N027/26
  • 专利详细信息:   CN111665110-A 15 Sep 2020 G01N-001/28 202081 Pages: 7 Chinese
  • 申请详细信息:   CN111665110-A CN10588193 24 Jun 2020
  • 优先权号:   CN10588193

▎ 摘  要

NOVELTY - Graphene-cobalt(II,III) oxide solid phase micro-extraction probe is claimed. The substrate of the probe is metal titanium wire, and the probe is cobalt(II,III) oxide nanowire arrays and graphene nanocrystals are sequentially deposited on the surface of the metal titanium wire. USE - Used as graphene-cobalt(II,III) oxide solid phase micro-extraction probe. ADVANTAGE - The probe: can optimize extraction effect by applying external magnetic field during process of processing the sample; and has simple preparation process; has large specific surface area, excellent extraction and enrichment effects, and high sensitivity and excellent stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing graphene-cobalt(II,III) oxide solid phase micro-extraction probe, comprising (i) cleaning and drying the metal titanium wire, (ii) preparing the cobalt salt solution by evenly stirring 10-50 g/l cobalt salt, 10-30 g/l urea, and 5-8 g/l ammonium fluoride, (iii) adding the cobalt salt solution into polytetrafluoroethylene reactor, and adding the cleaned titanium wire into a reactor at the same time, and carrying out hydrothermal reaction at 120-140 degrees C for 4-10 hours, (iv) washing with deionized water and ethanol, and drying in vacuum at 80 degrees C for 2 hours to obtain titanium metal wire with cobalt(II,III) oxide nanowire array deposited on the surface, and (v) adding the metal titanium wire with cobalt(II,III) oxide nanowire array deposited on the surface in the electron cyclotron plasma sputtering deposition chamber, and passing argon when the vacuum reaches 1x 10-4 Pa, maintaining the air pressure to 1x 10-2 Pa, applying coil magnetic field and introducing microwaves, generating the argon plasma under the coupling action of the magnetic field and the microwave, and applying the target bias voltage of 200 V, bombarding the carbon target, applying -100 V bias voltage to the substrate, and sputter depositing for 5-20 minutes, and depositing graphene nanocrystals on the surface of the cobalt(II,III) oxide nanowire array.