• 专利标题:   Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.
  • 专利号:   US2013243969-A1, TW201337029-A, TW434949-B1, US8871302-B2
  • 发明人:   TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W
  • 专利权人:   TENG P, LIN Y, CHIU P, UNIV NAT TSINGHUA
  • 国际专利分类:   B82Y040/00, C23C016/02, C23C016/26, H01R004/00
  • 专利详细信息:   US2013243969-A1 19 Sep 2013 C23C-016/26 201363 Pages: 19 English
  • 申请详细信息:   US2013243969-A1 US592957 23 Aug 2012
  • 优先权号:   TW108760

▎ 摘  要

NOVELTY - A method of growing graphene by chemical vapor deposition involves: disposing metals (14) and dielectric substrates (15) in a reactor (11), where a gap is formed between the metals and the dielectric substrates; introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates. USE - For growing graphene by chemical vapor deposition (claimed) used in electronics, optoelectronics, and bio-medical devices. ADVANTAGE - Using the method, high crystalline quality and low-defect graphene films can be synthesized directly on dielectric materials, without the process of wet etching and transfer. The method opens up a more direct route to apply graphene on electronics, optoelectronics, and bio-medical devices. Using the method, no metal residues are left on graphene or multilayer graphene deposited on the surfaces of the dielectrics. The method provides a new technique that allows direct growth of low-defect graphene films on the surface of the insulating substrate by chemical vapor deposition. Such an approach results in large-area and high-quality graphene films as produced by mechanical exfoliation, thus allowing for practical applications in bio-medical, electronic and optoelectronic devices. The method provides an improved technique for directly growing large-area graphene on insulating layers or on oxide surfaces by chemical vapor deposition without sacrificing high crystalline quality. DETAILED DESCRIPTION - A method of growing graphene by chemical vapor deposition involves: disposing metals (14) and dielectric substrates (15) in a reactor (11), where a gap is formed between the metals and the dielectric substrates; introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates. The reaction gases are comprised of hydrogen and a carbon-containing gas. The method involves a further step of introducing an inert gas into the reactor, where the inert gas flow rate is 5 to 3000 sccm, while that of hydrogen is 5 to 1000 sccm and that of the carbon-containing gas is 5 to 1000 sccm. Prior to the step of disposing the dielectrics in the reactor, the method involves a further step of: treating the dielectrics using oxygen plasma. Prior to the step of disposing the metal in the reactor, the method involves a further step of: treating the metal using an acid. The films deposited on the surfaces of the dielectrics are graphene or multilayer graphene. DESCRIPTION OF DRAWING(S) - The figure shows schematic view illustrating a process apparatus for growing graphene by chemical vapor deposition. Process apparatus (1) Reactor (11) Intake gate (12) Exhaust gate (13) Metals (14) Dielectrics (15)