▎ 摘　　要

NOVELTY - A method of growing graphene by chemical vapor deposition involves: disposing metals (14) and dielectric substrates (15) in a reactor (11), where a gap is formed between the metals and the dielectric substrates; introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates. USE - For growing graphene by chemical vapor deposition (claimed) used in electronics, optoelectronics, and bio-medical devices. ADVANTAGE - Using the method, high crystalline quality and low-defect graphene films can be synthesized directly on dielectric materials, without the process of wet etching and transfer. The method opens up a more direct route to apply graphene on electronics, optoelectronics, and bio-medical devices. Using the method, no metal residues are left on graphene or multilayer graphene deposited on the surfaces of the dielectrics. The method provides a new technique that allows direct growth of low-defect graphene films on the surface of the insulating substrate by chemical vapor deposition. Such an approach results in large-area and high-quality graphene films as produced by mechanical exfoliation, thus allowing for practical applications in bio-medical, electronic and optoelectronic devices. The method provides an improved technique for directly growing large-area graphene on insulating layers or on oxide surfaces by chemical vapor deposition without sacrificing high crystalline quality. DETAILED DESCRIPTION - A method of growing graphene by chemical vapor deposition involves: disposing metals (14) and dielectric substrates (15) in a reactor (11), where a gap is formed between the metals and the dielectric substrates; introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates. The reaction gases are comprised of hydrogen and a carbon-containing gas. The method involves a further step of introducing an inert gas into the reactor, where the inert gas flow rate is 5 to 3000 sccm, while that of hydrogen is 5 to 1000 sccm and that of the carbon-containing gas is 5 to 1000 sccm. Prior to the step of disposing the dielectrics in the reactor, the method involves a further step of: treating the dielectrics using oxygen plasma. Prior to the step of disposing the metal in the reactor, the method involves a further step of: treating the metal using an acid. The films deposited on the surfaces of the dielectrics are graphene or multilayer graphene. DESCRIPTION OF DRAWING(S) - The figure shows schematic view illustrating a process apparatus for growing graphene by chemical vapor deposition. Process apparatus (1) Reactor (11) Intake gate (12) Exhaust gate (13) Metals (14) Dielectrics (15)