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  • 专利标题:   Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.
  • 专利号:   IN202111057162-A
  • 发明人:   SHRIVASTAVA M, KHANEJA M, MEERSHA A
  • 专利权人:   INDIAN INST SCI, DEFENCE RES DEV ORG
  • 国际专利分类:   C23C016/02, C23C016/455, C30B029/22, H01L021/02, H01L029/66
  • 专利详细信息:   IN202111057162-A 09 Jun 2023 H01L-029/66 202356 English
  • 申请详细信息:   IN202111057162-A IN11057162 08 Dec 2021
  • 优先权号:   IN11057162

▎ 摘　　要

NOVELTY - The method involves depositing a seed layer over at least one atomically smooth surface of the two dimensional material; evaporating a predefined thickness of seed layer from at least one atomically smooth surface; and performing Atomic Layer Deposition (ALD), after evaporation, to grow at least one layer of oxide over the seed layer. USE - Method for depositing gate dielectric on a two-dimensional material.