• 专利标题:   Thermoelectric material comprises silicon-doped graphene layer formed by substituting portion of carbon atoms of graphene by silicon atoms.
  • 专利号:   KR2016025900-A, KR1697516-B1
  • 发明人:   LEE J S, LEE C H
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   C01B031/04, H01L035/22, H01L035/34
  • 专利详细信息:   KR2016025900-A 09 Mar 2016 201626 Pages: 9 English
  • 申请详细信息:   KR2016025900-A KR113365 28 Aug 2014
  • 优先权号:   KR113365

▎ 摘  要

NOVELTY - A thermoelectric material comprises silicon-doped graphene layer formed by substituting a portion of carbon atoms of graphene by silicon atoms. USE - Thermoelectric material (claimed). ADVANTAGE - The thermoelectric material has high thermal performance index of more than 2. The thermal conductivity of the thermoelectric material can be reduced without changing electroconductivity and Seebeck coefficient. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of thermoelectric material.