▎ 摘　　要

NOVELTY - Manufacturing method of substrate growth graphene, involves heating copper layer (metal layer) at 700-800 degrees C, and removing the oxide of the copper layer (metal layer), by applying the hydro-plasma on surface prior to growing graphene and by supplying hydrogen of 10 sccm. USE - Manufacturing method of substrate growth graphene used for electronic component such as CPU, memory and graphene transistor. ADVANTAGE - The grain boundary is controlled in the predetermined position, and the beginning of growth point of the graphene is reduced. The metal is rapidly removed and the granule size in which the graphene contacting on the substrate is large is realized.