• 专利标题:   Preparation of graphene-layer deposited silicon dioxide/silicon substrate for microelectronic device, involves depositing crystallized metal catalyst on silicon dioxide/silicon substrate, coating carbon source, annealing and etching.
  • 专利号:   CN104909359-A
  • 发明人:   GUO Y, HUANG R, LI H, SONG J, WANG X, SONG C, ZHANG Y, LIN Z
  • 专利权人:   UNIV HANSHAN NORMAL
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104909359-A 16 Sep 2015 C01B-031/04 201613 Pages: 8 Chinese
  • 申请详细信息:   CN104909359-A CN10274173 26 May 2015
  • 优先权号:   CN10274173

▎ 摘  要

NOVELTY - Preparation of graphene-layer deposited silicon dioxide/silicon substrate involves depositing thin-film of crystallized metal catalyst on silicon dioxide/silicon substrate, applying solid carbon source of resultant metal catalyst film, annealing, etching resultant product and removing residue and metal catalyst film. USE - Preparation of graphene-layer deposited silicon dioxide/silicon substrate used for microelectronic device. ADVANTAGE - The method enables preparation of graphene-layer deposited silicon dioxide/silicon substrate having high quality, by simple process within short period of time. The graphene-layer deposited silicon dioxide/silicon substrate enables manufacture of microelectronic device without performing substrate transfer process.