▎ 摘　　要

NOVELTY - The device (400) has a channel including a bilayer graphene layer formed on a dielectric layer. The dielectric layer provides a flat surface on which the channel is formed. Another dielectric layer is formed over the bilayer graphene layer. A local gate (405) is formed over the latter dielectric layer. The local gate is capacitively coupled to the channel of the bilayer graphene layer. The local gate and another local gate (410) are formed as a pair to locally control a portion of the bilayer graphene layer. Contact is formed for source and drain regions that are connected by the channel. USE - Graphene based tunable band gap bi-bond layered electronic device e.g. FET such as N-type FET and P-type FET, for fabricating an integrated circuit (claimed). ADVANTAGE - The device allows the local gates to be patterned and a band gap and device threshold voltage to be determined by biases from the bottom gate, so that the device on a same wafer can be independently tuned with different threshold voltage or band gap to reduce gate leakage problem and poor leakage current due to lack of the threshold voltage. The device is designed such that an angle, dose and energy of ion implantation can be selected to provide high conductivity to the source and drain regions to minimize source and drain resistance of the device. DETAILED DESCRIPTION - The local gates are a top gate and a bottom gate. INDEPENDENT CLAIMS are also included for the following: (1) a method for forming an electronic device (2) an integrated circuit comprising an insulator. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene based tunable band gap bi-bond layered electronic device. Substrate (105) Insulator (110) Graphene based tunable band gap bi-bond layered electronic device (400) Local gates (405, 410, 415)