▎ 摘　　要

NOVELTY - 2-Dimensional (2D) non-volatile switch (2DNS) comprises a vertical metal-insulator-metal (MIM) structure comprising a top metal electrode (TE), a bottom metal electrode (BE), and a semiconducting monolayer crystalline non-metallic atomic sheet sandwiched between the top metal electrode and the bottom metal electrode. The monolayer crystalline non-metallic atomic sheet is operable to perform stable non-volatile resistance switching. USE - 2-Dimensional non-volatile switch used in radiofrequency, 5G and terahertz communication and connectivity systems. ADVANTAGE - The switches achieve a low insertion loss, high isolation (up to 220 giga hertz), and FCO values of about 129 Terahertz due to their nanoscale vertical and lateral dimensions, which offer low resistance in the on state and low capacitance in the off state. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for synthesizing a semiconducting monolayer crystalline non-metallic atomic sheet on a target substrate, which involves: i. growing a monolayer atomic sheet transition metal dichalcogenide (TMD) layer on an initial substrate layer; ii. growing a polydimethylsiloxane (PDMS) layer on the TMD layer; iii. soaking the PDMS layer, TMD layer, and initial substrate layer in a solvent; iv. separating the initial substrate layer from the TMD layer; v. growing a target substrate layer on the TMD layer; and vi. removing the PDMS layer from the TMD layer, to form a semiconducting monolayer crystalline non-metallic atomic sheet comprising TMD on the target substrate layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a transition metal dichalcogenide (TMD) crossbar sandwich, TMD lithography-free (litho-free) sandwich, and hexagonal boron nitride (h-BN) transfer-free sandwich metal-insulator-metal (MIM) devices. BEBottom metal electrode TETop metal electrode