▎ 摘　　要

NOVELTY - Preparing graphene coated metal nano-wire comprises e. g. (i) pre-scratching the silicon substrate, and cleaning and drying the silicon substrate; (ii) placing the nickel salt in absolute ethanol, dispersing by ultrasonication, and dropping into the silicon substrate; (iii) placing the silicon substrate at 600-1200 degrees C and holding in a hydrogen atmosphere, cooling to room temperature with the furnace in a hydrogen atmosphere, and reducing the uniformly dispersed nickel salt on the silicon substrate into nickel nanoparticles; (iv) placing the metal oxide powder in the aluminum dioxide porcelain ark, treating the silicon substrate on aluminum dioxide porcelain ark, and placing the aluminum oxide porcelain ark in a horizontal tube furnace; and (v) installing distilled water into the gas bottle, and fixing the gas bottle on the heating table, purging hydrogen and argon into the horizontal tube furnace, scrubbing by the gas cylinder and eliminating the air in the horizontal tube furnace. USE - The method is useful for preparing graphene coated metal nano-wire. DETAILED DESCRIPTION - Preparing graphene coated metal nano-wire comprises (i) pre-scratching the silicon substrate, and cleaning and drying the silicon substrate; (ii) placing the nickel salt in absolute ethanol, dispersing by ultrasonication, and dropping into the silicon substrate; (iii) placing the silicon substrate at 600-1200 degrees C and holding in a hydrogen atmosphere, cooling to room temperature with the furnace in a hydrogen atmosphere, and reducing the uniformly dispersed nickel salt on the silicon substrate into nickel nanoparticles; (iv) placing the metal oxide powder in the aluminum dioxide porcelain ark, treating the silicon substrate on aluminum dioxide porcelain ark, and placing the aluminum oxide porcelain ark in a horizontal tube furnace; (v) installing distilled water into the gas bottle, and fixing the gas bottle on the heating table, purging hydrogen and argon into the horizontal tube furnace, scrubbing by the gas cylinder and eliminating the air in the horizontal tube furnace; and (vi) adjusting the flow rate of argon to 100 sccm or more, and adjusting the flow rate of hydrogen 30 sccm or less, adjusting the temperature of the water in the scrubber to 80-120 degrees C, adjusting the temperature in the horizontal tube furnace to 800-1200 degrees C, cooling to room temperature and obtaining uniform diameter silicon substrate.