▎ 摘　　要

NOVELTY - Synthesizing graphene comprises e.g. preparing transition metal thin film as catalyst layer, performing surface-treatment of transition metal thin film so that 'RMS roughness', which is the surface roughness of the surface of the transition metal thin film is less than or equal to 1 nm, selectively patterning the transition metal thin film to have a photo process on the surface, and protective area covered with photoresist and an open area open from the photoresist, performing second surface treatment on the transition metal thin film patterned into the protective area and the open area, removing the photoresist from the transition metal thin film on which the secondary surface treatment has been performed, and inserting the transition metal thin film into a chemical vapor deposition (CVD) chamber for a chemical vapor deposition (CVD) process, and synthesizing a conductive graphene thin film in the protective area and synthesizing a graphene thin film with controlled conductivity. USE - The graphene is useful in device manufacturing fields. ADVANTAGE - The graphene exhibits unique structural, optical, and electrical and electronic properties; has excellent mechanical properties with a very large specific surface area and high Young's modulus (1,100 GPa), has high transparency of more than 95%. DETAILED DESCRIPTION - Synthesizing graphene comprises (1) preparing transition metal thin film as a catalyst layer, (2) performing surface-treatment of transition metal thin film so that 'RMS roughness', which is the surface roughness of the surface of the transition metal thin film is less than or equal to 1 nm, (3) selectively patterning the transition metal thin film to have a photo process on the surface, and protective area covered with photoresist and an open area open from the photoresist, (4) performing second surface treatment on the transition metal thin film patterned into the protective area and the open area, (5) removing the photoresist from the transition metal thin film on which the secondary surface treatment has been performed, and inserting the transition metal thin film into a chemical vapor deposition (CVD) chamber for a chemical vapor deposition (CVD) process, and (6) synthesizing a conductive graphene thin film in the protective area and synthesizing a graphene thin film with controlled conductivity in the open area by injecting a source gas into the chemical vapor deposition chamber and controlling the process temperature in a specific temperature range. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for synthesizing graphene (Drawing includes non-English language text).