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  • 专利标题:   Manufacture of nanowire for optical element, involves forming metal microparticles on graphene, and forming nanowire of specific group compound by organometallic vapor phase epitaxy.
  • 专利号:   JP2013129548-A, JP5795527-B2
  • 发明人:   TATENO K, SASAKI S, HIBINO H, ZHANG G Q, SHO K
  • 专利权人:   NIPPON TELEGRAPH TELEPHONE CORP, NIPPON TELEGRAPH TELEPHONE CORP
  • 国际专利分类:   B01J023/52, B82Y020/00, B82Y030/00, B82Y040/00, C01B025/08, C01G028/00, H01L031/04, H01L031/10, H01L033/04
  • 专利详细信息:   JP2013129548-A 04 Jul 2013 C01B-025/08 201358 Pages: 13 Japanese
  • 申请详细信息:   JP2013129548-A JP278258 20 Dec 2011
  • 优先权号:   JP278258

▎ 摘　　要

NOVELTY - Metal microparticles (102) are formed on a graphene (101), and nanowire (304) of III-V group compound is formed by organometallic vapor phase epitaxy using the metal microparticles as catalyst. USE - Manufacture of nanowire for optical element used as light source of single photon used for quantum communication and field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows block diagram of the nanowire grown in parallel direction to the plane of graphene. Graphene (101) Metal microparticles (102) Substrate (103) Nanowire (304)