▎ 摘　　要

NOVELTY - Broadband electromagnetic absorption structure comprises first dielectric substrate layer, first graphene layer, diaphragm layer, second graphene layer, second dielectric substrate layer, first indium tin oxide layer, third dielectric substrate layer, second indium tin oxide layer, fourth dielectric substrate layer, third indium tin oxide layer and fifth dielectric substrate layer. A first gap is formed between first indium tin oxide layer and second dielectric substrate layer and is filled with air. The third dielectric substrate layer is located below first indium tin oxide layer. A second gap is formed between second indium tin oxide layer and third dielectric substrate layer. The fourth dielectric substrate layer is located below second indium tin oxide layer. The second indium tin oxide layer is attached to upper surface of fourth dielectric substrate layer. A third gap is formed between third indium tin oxide layer the fourth dielectric substrate layer. USE - Used as broadband electromagnetic absorption structure. ADVANTAGE - The structure: has excellent adjustable surface resistance properties, excellent light transmittance in the microwave frequency range, optical transparency, larger range of adjustable absorbing amplitude and a wider relative bandwidth, and excellent absorbing effect; utilizes first indium tin oxide layer and the second indium tin oxide layer respectively as dielectric loss layers, and the third indium tin oxide layer serves as a shielding reflection layer; and can meets the transmission theory of the transmission line. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the broadband electromagnetic absorption structure.