• 专利标题:   Manufacture of graphene used for e.g. graphene sheet, involves reacting reaction gas including carbon source, and heat on substrate.
  • 专利号:   WO2012015267-A2, KR2012012271-A, WO2012015267-A3, US2013130011-A1
  • 发明人:   AHN J, BAE S K, HONG B H, JUNG M H, KIM H R, KIM S J, AHN J H, BAE S
  • 专利权人:   UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI
  • 国际专利分类:   C01B031/02, C23C016/26, C23C016/513, H01L031/04, C01B031/04
  • 专利详细信息:   WO2012015267-A2 02 Feb 2012 C01B-031/02 201214 Pages: 19
  • 申请详细信息:   WO2012015267-A2 WOKR005600 29 Jul 2011
  • 优先权号:   KR074323, KR074323

▎ 摘  要

NOVELTY - A reaction gas including a carbon source, and heat are reacted on a substrate (11), to form a graphene (12) on the substrate. USE - Manufacture of graphene used for graphene sheet and device (all claimed) e.g. electrical and electronic device. Uses include but are not limited to film for transparent electrode for solar cell, optoelectronic device, optical device, light-emitting device and sensor device. ADVANTAGE - The graphene having favorable transparency is economically and safely manufactured by simple method without using catalyst. The device is manufactured using the graphene by direct patterning method without separate transcription stage. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of manufacturing device of graphene. Substrate (11) Graphene (12) Load-lock chamber (13) Induced coupled plasma chemical vapor deposition chamber (15)