▎ 摘　　要

NOVELTY - Preparing graphene-molybdenum disulfide-silicon hetero-junction solar cell, involves soaking n-silicon (grade 111) as a substrate in hydrogen fluoride acid to remove silica of silicon surface. The silicon surface is washed successively with acetone, ethanol, deionized water and ultrasonic cleaning to remove organic matter of upper silicon chip. The silicon chip is dried by nitrogen and then put into quartz tube for deposition at 300 degrees C for 10 minutes to remove water vapor of silicon surface, where vacuum pressure is 10-2 Pascal. USE - Method for preparing graphene-molybdenum disulfide-silicon hetero-junction thin solar cell (claimed). DETAILED DESCRIPTION - Preparing graphene-molybdenum disulfide-silicon hetero-junction thin solar cell, involves soaking n-silicon (grade 111) as a substrate in hydrogen fluoride acid to remove silica of silicon surface. The silicon surface is washed successively with acetone, ethanol, deionized water and ultrasonic cleaning to remove organic matter of upper silicon chip. The silicon chip is dried by nitrogen and then put into quartz tube for deposition at 300 degrees C for 10 minutes to remove water vapor of silicon surface, where vacuum pressure is 10-2 Pascal. Molybdenum disulfide preparation method involves heating quartz tube at 500-600 degrees C utilizing argon gas as carrier. Dilute sulfuric acid is utilized as solvent for molybdenum disulfide. Aluminum nitrate is added into molybdenum disulfide solution. Aluminum nitrate is used as dopant for aluminum-molybdenum disulfide p-type doping process. The gas carrying molybdenum disulfide and aluminum nitrate are introduced into quartz tube for nucleation and growth for 5-10 minutes on silicon chip, where mass ratio of molybdenum disulfide and aluminum nitrate are utilized in 1:20-1:50. The quartz tube is annealed at 950 degrees C for 20-40 minutes to obtain molybdenum disulfide-silicon p-n junction. The quartz tube temperature is maintained at 950 degrees C and then methane is decomposed into carbon and hydrogen in presence of argon gas. Carbon is absorbed on substrate and hexagonal net-shaped structure of the graphene thin film is formed. The upper surface of silicon chip and aluminum electrode are utilized for cathode to obtain graphene-molybdenum disulfide-silicon hetero-junction thin solar cell.