▎ 摘　　要

NOVELTY - A method of forming recrystallized metal layer for growing graphene monolayer involves: forming a metal layer on a substrate; forming a layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer to form a recrystallized metal layer for growing a graphene monolayer, where the graphene monolayer has a length of greater than or equal to 15 microns. USE - For forming recrystallized metal layer for growing graphene monolayer (claimed). ADVANTAGE - The method forms recrystallized metal layer that form graphene monolayers having metal grains sizes that are larger than metal grains sizes of a metal layer that has not been subjected to directional recrystallization. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a device comprising: a layer of dielectric material adjacent a substrate; and a directionally recrystallized metal layer adjacent the layer of dielectric material, where the directionally recrystallized metal layer comprises a metal layer for growing a graphene monolayer, where the graphene monolayer has a length of greater than or equal to 15 microns; and (2) a system comprising: at least one of the device configured to: form a metal layer on a substrate; form a dielectric layer on the metal layer; and directionally recrystallize the metal layer to form a metal layer for growing a graphene monolayer, where the graphene monolayer has a length of greater than or equal to 15 microns.