▎ 摘　　要

NOVELTY - A graphene oxide quantum dot-based three-state charge-trapping memory comprises oxide dielectric layer and palladium electrode film layer formed on a silicon substrate, where the oxide dielectric layer comprises silicon dioxide tunnel oxide layer, zinc oxide/graphene oxide quantum dots/zinc oxide charge trapping layer and silicon oxide blocking oxide layer which are sequentially formed on the silicon substrate, and the graphene oxide quantum dots layer in zinc oxide/graphene oxide quantum dots/zinc oxide charge trapping layer is single-layer graphene oxide quantum dot layer. USE - Graphene oxide quantum dot-based three-state charge-trapping memory. ADVANTAGE - The graphene oxide quantum dot-based three-state charge-trapping memory has stable capacitance value state, stable data retention properties, stable programming and erasing flat band voltage value, excellent storage performance, low operation voltage and current memory, high storage density and high stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a graphene oxide quantum dot-based three-state charge-trapping memory.