▎ 摘　　要

NOVELTY - The method involves bringing a stamp into contact with a silicon substrate (106) over a contact area, where the stamp includes layers of a graphene covering the contact area. An electric field is developed over the contact area, where the stamp comprises highly ordered pyrolytic graphite. The stamp is removed from the vicinity of the substrate which leaves one of the layers of the graphene covering the contact area. A resist is developed over the contact area of the highly ordered pyrolytic graphite. USE - Method for depositing graphene on a substrate e.g. silicon substrate and silicon-dioxide substrate, to form a graphene-based integrated circuit such as graphene nanoribbon transistor in a graphene-based electronic device. ADVANTAGE - The method eliminates a need for an adhesion layer between a few-layer-graphene (FLG) flake and a silicon-dioxide surface and can be repeatedly performed to incorporate graphitic materials over a large wafer-sized area in a parallel fashion. The method deposits the graphene on the substrate to form the graphene nanoribbon transistor with excellent performance. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating exfoliation of pre-patterned few-layer graphenes by electrostatic force as a highly oriented pyrolytic graphite template is separated from a substrate, where outermost graphene monolayers are held by the electrostatic force leading to a thin exfoliation thickness of few-layer-graphenes due to a thin screening depth in graphite in a pre-patterned few-layer-graphenes. Nanometer/micrometer scale relief features (102) Highly oriented pyrolytic graphite disc (104) Silicon substrate (106) Silicon-dioxide surface layer (108) Pre-patterned few-layer-graphene (110)