▎ 摘　　要

NOVELTY - Graphene field effect transistor array biosensor comprises silicon substrate (1), oxide layer (2), first metal grid electrode, second metal grid electrode, grid insulating layer (4), first graphene conductive channel layer, second graphene conductive channel layer, first set source and drain electrode, second set source and drain electrode comprising oxide layer is provided on silicon substrate, first and second metal grid electrodes are symmetrically provided on oxide layer. The grid insulating layer is provided outside first metal grid electrode and second metal grid electrode. The grid insulating layer completely covers first metal grid electrode and second metal grid electrode. The first graphene conductive channel layer is symmetrically provided on grid insulating layer and second graphene conductive channel layer. The first graphene conductive channel layer is provided with first set of source and drain electrodes, and second channel layer is provided with second set source. USE - Used as graphene field effect transistor array biosensor. ADVANTAGE - The biosensor: has high detection accuracy. DETAILED DESCRIPTION - Graphene field effect transistor array biosensor comprises silicon substrate (1), oxide layer (2), first metal grid electrode, second metal grid electrode, grid insulating layer (4), first graphene conductive channel layer, second graphene conductive channel layer, first set of source and drain electrode, where the second set of sources and drain electrode comprises oxide layer is provided on silicon substrate, first metal grid electrode and second metal grid electrode are symmetrically provided on oxide layer. The grid insulating layer is provided outside first metal grid electrode and second metal grid electrode. The grid insulating layer completely covers first metal grid electrode and second metal grid electrode. The first graphene conductive channel layer is symmetrically provided on grid insulating layer and second graphene conductive channel layer. The first graphene conductive channel layer is provided with first set of source and drain electrodes. The second graphene conductive channel layer is provided with second set of source and drain electrodes. The first set of source and drain electrodes between first graphene conductive channel layer is fixed with capture antibody molecule. The second set of source and drain electrodes between second graphene conductive channel layer is fixed with bovine serum albumin. The first metal grid electrode, first graphene conductive channel layer, and first set of source and drain electrodes constitute detecting unit (11). The second metal grid electrode, second graphene conductive channel layer and second set of source and drain electrodes constitute reference unit (10). The oxide layer has a thickness of 500-550 nm. The material of first metal grid electrode and second metal grid electrode is titanium/platinum, where thickness of titanium is 90-110 nm, and thickness of platinum is 190-210 nm. The first metal grid electrode and second metal grid electrode has width of 4-5 mu m. The thickness of the grid insulating layer on both sides of first metal grid electrode and second metal grid electrode is 8-10 nm. The first set of source and drain electrodes and second set of source and drain electrodes each has thickness of 1-2 mu m. An INDEPENDENT CLAIM is also included for preparing the graphene field effect transistor array biosensor. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the graphene field effect transistor array biosensor. Silicon substrate (1) Oxide layer (2) Grid insulating layer (4) Reference unit (10) Detecting unit (11)