▎ 摘　　要

NOVELTY - A film comprising graphene is prepared continuously by providing metal substrate; continuously advancing metal substrate into and through a processing chamber; heating metal substrate to form molten metal layer on top surface of metal substrate; contacting molten metal layer with carbon source gas to form graphene-comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying molten metal layer; and advancing metal substrate having the graphene-comprising layer out of the processing chamber to form a film comprising graphene. USE - Continuous preparation of a film comprising graphene. ADVANTAGE - The method allows direct synthesis of a uniform layer of graphene directly on the molten metal layer of the substrate, reducing and/or eliminating the grain boundaries that are observed when using, for example, solid polycrystalline copper. The resultant graphene layer comprises a uniform nucleation distribution and low graphene nucleation density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for film comprising graphene.