▎ 摘　　要

NOVELTY - Chemical vapor deposition based preparation method of silicon doped graphene material, involves cleaning a substrate, carrying out argon plasma treatment, placing the treated substrate within a reactor, maintaining atmospheric pressure or vacuum within the reactor, introducing hydrogen at flow of 0.1-2000 sccm and at heating rate of 1-300 degrees C/minutes, then heating at 800-1800 degrees C, introducing carbon source gas and silicon source gas, carrying out reaction for 1-600 minutes, then carrying out quenching process at heating rate of 1-500 degrees C/minutes, and cooling to room temperature. USE - Chemical vapor deposition based preparation method of silicon doped graphene material used in optoelectronic technology and micro-nano device fabrication fields. ADVANTAGE - The problems of zero band gap graphene material are solved. DETAILED DESCRIPTION - Chemical vapor deposition based preparation method of silicon doped graphene material, involves cleaning a substrate, carrying out argon plasma treatment for 1-60 minutes at 10-500 watts, placing the treated substrate within a reactor, maintaining atmospheric pressure or vacuum within the reactor, introducing hydrogen at flow of 0.1-2000 sccm and at heating rate of 1-300 degrees C/minute, then heating at 800-1800 degrees C, introducing carbon source gas and silicon source gas in a flow rate ratio of 1:10-10000:1, carrying out reaction for 1-600 minutes, then carrying out quenching process at heating rate of 1-500 degrees C/minute, and cooling to room temperature.