▎ 摘　　要

NOVELTY - Graphene dispersion liquid is prepared by ultrasonic peeling method. Precursor solutions are prepared using the graphene dispersion liquid, and sprayed on silicon substrate, such that graphene film and amorphous carbon wrapping graphene composite carbon film is deposited. The resultant material is dried and heat-treated in air or vacuum to obtain graphene alkene film and graphene composite carbon film. USE - Manufacture of graphite alkene film and graphene composite carbon film used for manufacturing semiconductor thin film. ADVANTAGE - The method efficiently and economically provides graphite alkene film and graphene composite carbon film having excellent adhesiveness, porosity and electrical performance, by simple method. DETAILED DESCRIPTION - A precursor solution having concentration of 0.03 g/ml, is obtained by dispersing graphite powder to 1-methyl-2-pyrrolidone. The obtained solution (100 ml) is added to low power ultrasonic cleaning machine at room temperature for 78 hours, and processed to obtain graphene dispersion liquid. The obtained solution is centrifuged to obtain stably dispersed graphene dispersion liquid as precursor solution (A). Polyacrylonitrile is added to graphene dispersion liquid, and stirred for 5 hours or less to obtain precursor solution (B). Silicon chips is cleaned for 30 minutes to remove the oxide layer, and soaked for 30 minutes in acetone. The obtained material is ultrasonically cleaned using ethanol and water for 10 minutes, and maintained under infrared lamp to obtain silicon sheet. The precursor solution (A) is added to micro-injection pump injector by adjusting the flowing speed, deposited on a silicon wafer substrate on heating plate, and naturally cooled after the temperature is controlled at 200 degrees C, such that graphite alkene is stacked on the silicon substrate of the graphene film. The precursor solution (B) is added to micro-injection pump injector by adjusting the flowing speed of liquid, and uniformly spraying the precursor deposited on the silicon wafer substrate. The obtained material is subjected to carbonization treatment and the temperature is maintained for 2 hours to obtain composite carbon film.